BLV21 Datasheet – VHF Power Transistor – Philips

Part Number : BLV21

Function : VHF power transistor / N-P-N silicon planar epitaxial transistor

Package : SOT123 Type

Manufacturers : Philips Electronics

Pinouts :

BLV21 datasheet

Description :

N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 3/8″ flange envelope with a ceramic cap. All leads are isolated from the flange.

Limiting values

1. Collector-emitter voltage (VBE = 0) peak value : VCESM = max. 65 V
2. Collector-emitter voltage (open base) : VCEO = max. 36 V
3. Emitter-base voltage (open collector) : VEBO = max. 4 V
4. Collector current (average) : IC(AV) = max. 1,75 A
5. Collector current (peak value); f > 1 MHz : ICM = max. 5,0 A
6. R.F. power dissipation (f > 1 MHz); Tmb = 25 °C : Prf = max. 36 W

BLV21 Datasheet PDF

BLV21 pdf

BLV25 Datasheet PDF – VHF Power Transistor – Philips

Part Number : BLV25

Function : VHF Power Transistor

Package : SOT119A

Manufacturers : Philips Electronics

Image

BLV25 datasheet

 

Description :

N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters. The transistor has a 1/2 in 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange.

Pinout

BLV25 VHF Transistor

Features

1. internally matched input for wideband operation and high power gain;
2. multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile;
3. gold-metallization ensures excellent reliability.

 

BLV25 Datasheet PDF

BLV25 pdf