Part Number: TIM1414-4LA
Function: Microwave Power GaAs FET
Manufacturer: Toshiba
Image and Pinouts:
Description:
This is 15V, 5.2A, Microwave Power GaAs FET.
Features:
1. High Power : P1dB=36.5dBm at 14.0Ghz to 14.5Ghz
2. High Gain : G1dB=6.5dB at 14.0Ghz to 14.5Ghz
3. Broad Band Internally Matched FET
4. Hermetically Sealed Package
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-Source Voltage : VDS = 15 V
2. Gate-Source Voltage : VGS = -5 V
3. Drain Current : IDS = 5.2 A
4. Total Power Dissipation (Tc= 25 °C) : PT = 42.8 W
5. Channel Temperature : Tch = 175 °C
TIM1414-4LA Datasheet PDF Download
Other data sheets are available within the file: TIM1414, TIM14144LA
