Part Number: TIP41C
Function: 100V, 6A, NPN Transistor
Package: TO-220 Type
Manufacturer: ON Semiconductor
TIP41C Pinout
Description
TIP41C is 6 AMPERE, COMPLEMENTARY SILICON POWER TRANSISTOR.
A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.
NPN Configuration
1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.
2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.
3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.
Features
• Epoxy Meets UL 94 V−0 @ 0.125 in
• These Devices are Pb−Free and are RoHS Compliant
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 100 V
2. Collector to Emitter Voltage: Vceo = 100 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 6 A
5. Total Dissipation : Pc = 65 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Applications
1. General purpose amplifier and switching
Other data sheets are available within the file: TIP41 ,TIP41AG, TIP41BG, TIP41CG
TIP41C Datasheet PDF Download
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