Part Number : TK5A50D
Function : 500V, Silicon N-Channel MOSFET
Package : SC-67, 2-10U1B, TO-220 type
Manufacturers : Toshiba
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Pinouts : 1. Gate 2. Drain 3. Source
Description :
TK5A50D is Silicon N Channel MOS Type Field Effect Transistor.
Features :
• Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
• Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 500 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 5 A
4. Drain Power Dissipation : Pd = 35 W (Tc = 25°C)
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Applications :
1. Switching Regulator
Other data sheets within the file : 5A50D
TK5A50D Datasheet PDF Download
