Toshiba TK5A50D Datasheet PDF – Vdss=500V

Part Number : TK5A50D

Function : 500V, Silicon N-Channel MOSFET

Package : SC-67, 2-10U1B, TO-220 type

Manufacturers : Toshiba

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TK5A50D datasheet

Pinouts : 1. Gate  2. Drain  3. Source

Description :

TK5A50D is Silicon N Channel MOS Type Field Effect Transistor.

Features :

• Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.)

• High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)

• Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)

• Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 500 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 5 A
4. Drain Power Dissipation : Pd = 35 W (Tc = 25°C)
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C

 

Applications :

1. Switching Regulator

 

Other data sheets within the file : 5A50D

TK5A50D Datasheet PDF Download

TK5A50D pdf