Part Number : TLP651
Function : Photocoupler GaA-As IRed & Photo−IC
Package : 11-10C4, DIP 8
Manufacturers : Toshiba
The TOSHIBA TLP651 consists of a GaAℓAs high−output light emitting
diode and a high speed detector of one chip photo diode−transistor.
This unit is 8−lead DIP.
TOSHIBA Photocoupler GaAℓAs IRed & Photo−IC TLP651 Digital Logic Ground Isolation Line Receiver Microprocessor System Interfaces Switching Power Supply Feedback Control Analog Signal Isolation TLP651 Unit in mm The TOSHIBA TLP651 consists of a GaAℓAs high−output light emitting diode and a high speed detector of one chip photo diode−transistor. This unit is 8−lead DIP. TLP651 has internal base connection. This base pin should be used for analog application or enable operation. If base pin is open, output signal will be noisy by enviromental condition. For this case, TLP650 is suitable. · Isolation voltage: 5000Vrms (min.) · Switching speed: tpHL = 0.3µs (typ.) tpLH = 0.5µs (typ.) (RL = 1.9kΩ) · TTL compatible · UL recognized: UL1577, file no. E67349 · BSI approved: BS EN60065: 1994 Certiticate no. 7613 BS EN60950: 1992 Certiticate no. 7614 TOSHIBA Weight: 0.54g 11−10C4 Pin Configuration (top view) Schematic 1 2002-09-25 TLP651 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Detector LED Forward current Pulse forward current Peak transient forward current Reverse voltage Diode power dissipation Output current Peak output current Output voltage Supply voltage Base current Emitter-base reverse voltage Output power dissipation Operating temperature range Storage temperature range Lead solder temperature (10s) Isolation voltage (AC, 1min., R.H.≤ 60%) (Note 1) (Note 2) (Note 3) (Note 4) (Note 5) (Note 6) (Note 7) IF IFP IFPT VR PD IO IOP VO VCC IB VEB PO Topr Tstg Tsol BVS 25 50 1 5 45 8 16 -0.5~15 -0.5~15 5 5 100 -55~100 -55~125 260 5000 mA mA A V mW mA mA V V mA V mW °C °C °C Vrms (Note 1) Derate 0.8mA above 70°C. (Note 2) 50% duty cycle,1ms pulse width. Derate 1.6mA / °C above 70°C. (Note 3) Pulse width ≤ 1µs, 300pps. (Note 4) Derate 0.9mW / °C above 70°C. (Note 5) Derate 2mW / °C above 70°C. (Note 6) Soldering portion of lead: Up to 2mm from the body of the device. (Note 7) Device considered a t [ … ]
TLP651 Datasheet PDF Download
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