Part Number : TPC8107
Function : Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
Package : SOP 8 Pin type
Manufactures : Toshiba Semiconductor
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Features
1. Small footprint due to small and thin package
2. Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.)
3. High forward transfer admittance: |Yfs| = 31 S (typ.)
4. Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
5. Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Pinout
Applications
1. Lithium Ion Battery Applications
2. Notebook PC Applications
3. Portable Equipment Applications
Maximum Ratings (Ta = 25°C)
1. Drain-source voltage : VDSS = -30 V
2. Drain-gate voltage (RGS 20 k) : VDGR = -30 V
3. Gate-source voltage : VGSS = +-20 V
4. Drain power dissipation (t 10 s) : PD = 1.9 W