UPD5702TU Datasheet PDF – Laterally Diffused (LD) MOSFET

Part Number : UPD5702TU

Function : 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT

Package : 8-pin lead-less minimold

Manufacturers : California Eastern Laboratories.

Pinouts :
UPD5702TU datasheet

Description :

The µPD5702TU is a silicon laterallydiffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin L2MM (Lead Less Mini Mold) plastic package.

FEATURES

1. Output Power
: Pout=+21 dBm MIN. @Pin= −5 dBm, f =1.9 GHz, VDS=3.0 V
: Pout=+21 dBm MIN. @Pin= +2 dBm, f = 2.45 GHz, VDS=3.0 V
2.  Single Supplyvoltage  : VDS= 3.0 V TYP.
3. Packaged in 8-pin Lead-Less Minimold (2.0 x2.2 x 0.5mm) suitable for high-densitysurface mounting.

 

APPLICATIONS

1. 1.9 GHz applications (Example : PHS etc.)
2. •2.4 GHz applications (Example : Wireless LAN etc.)

Other data sheets within the file : UPD5702

UPD5702TU Datasheet PDF Download

UPD5702TU pdf