Part Number: W11NB80, STW11NB80
Function: N-Channel MOSFET, 800V, 11A
Package: TO-247 Type
Manufacturer: STMicroelectronics
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Description
This is 800V, 11A, N-Channel Power MOSFET.
Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an
advanced family of power MOSFETs with outstanding performances. The new patent
pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Features
1. TYPICAL RDS(on) = 0.65 Ω
2. EXTREMELY HIGH dv/dt CAPABILITY
3. ± 30V GATE TO SOURCE VOLTAGE RATING
4. 100% AVALANCHE TESTED
5. VERY LOW INTRINSIC CAPACITANCES
6. GATE CHARGE MINIMIZED
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Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 800 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 11 A
4. Total Power Dissipation : Ptot = 190 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -65 to +150 °C