Part Number: W12NA60
Function: 600V, 12A, N-Channel MOSFET
Package: TO-247, TO-218, ISOWatt218 Type
Manufacturer: STMicroelectronics
Image and Pinouts:
Description
THE W12NA60 IS N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR.
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
Features
1. 100% AVALANCHE TESTED
2. REPETITIVE AVALANCHE DATA AT 100oC
3. LOW INTRINSIC CAPACITANCES
4. GATE GHARGE MINIMIZED
5. REDUCED THRESHOLD VOLTAGE SPREAD
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 12 A
4. Total Power Dissipation : Ptot = 190 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -65 to +150 °C
Applications:
1. HIGH CURRENT, HIGH SPEED SWITCHING
2. SWITCH MODE POWERSUPPLIES (SMPS)
3. DC-AC CONVERTERS
Other data sheets are available within the file: STH12NA60, STH12NA60FI, STW12NA60
W12NA60 Datasheet PDF Download
