W60N10 Datasheet PDF – 100V, 60A, N-Ch, MOSFET – ST

Part Number : W60N10

Function : 60A, 100V, N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

Package : TO-247, TO-218, ISOWATT218 Type

Manufacturers : STMicroelectronics

Pinouts :

W60N10 datasheet

 

Description :

1. TYPICAL RDS(on)= 0.02 Ω
2. AVALANCHE RUGGED TECHNOLOGY
3. 100% AVALANCHE TESTED
4. REPETITIVE AVALANCHE DATA AT 100’C
5. LOW GATE CHARGE
6. VERY HIGH CURRENT CAPABILITY
7. 175’C OPERATING TEMPERATURE
8. APPLICATION ORIENTED CHARACTERIZATION

Absoulte maximum ratings

1. Drain-source Voltage (VGS = 0) : VDS = 100 V
2. Drain- gate Voltage (RGS = 20 kW) : VDGR = 100 V
3. Gate-source Voltage : VGS = ± 20 V
4. Drain Current (continuous) at Tc = 25 ‘C : ID  = 60 A
5. Drain Current (continuous) at Tc = 100 ‘C : ID 42 A
6. Drain Current (pulsed) : IDM = 240 A
7. Total Dissipation at Tc = 25 ‘C : Ptot = 200 W

Applications

1. HIGH CURRENT, HIGH SPEED SWITCHING
2. SOLENOID AND RELAY DRIVERS
3. REGULATORS
4. DC-DC & DC-AC CONVERTERS
5. MOTOR CONTROL, AUDIO AMPLIFIERS
6. AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

 

 

Other data sheets within the file : H60N10, STH60N10, STH60N10FI, STW60N10

W60N10 Datasheet PDF Download


W60N10 pdf