YTA630 Datasheet PDF – 200V, 10A, N-Ch, MOSFET – Toshiba

Part Number : YTA630

Function : 200V, 10A, N-CHANNEL, Si, POWER, MOSFET

Package : TO-220AB Type

Manufacturers : Toshiba

Pinouts :

YTA630 datasheet

 

Description :

This is 200V, 10A, N-Channel MOSFET.

Features :

1. Low Drain-Source On Resistance  : Rds(on) = 0.26Ohm(Typ.)

2. High Forward Transfer Admittance : | Yfs | = 8S(Typ.)

3. Low Leakage Current : Idss = 100uA (Max.) (Vds = 200V)

4. Enhancement-Mode : Vth = 1.5 ~ 3.5V (Vds =10V, Id = 1mA)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 200 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 10 A

4. Drain Power Dissipation : Pd = 40 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

 

Other data sheets within the file : YTA-630

YTA630 Datasheet PDF Download


YTA630 pdf