YTA630 Datasheet PDF - 200V, 10A, N-Ch, MOSFET

Part Number: YTA630

Function: 200V, 10A, N-CHANNEL, Si, POWER, MOSFET

Package: TO-220AB Type

Manufacturer: Toshiba

Pinouts:

Description

This is 200V, 10A, N-Channel MOSFET.

1. Low Drain-Source On Resistance : Rds(on) = 0.26Ohm(Typ.)

2. High Forward Transfer Admittance : | Yfs | = 8S(Typ.)

3. Low Leakage Current : Idss = 100uA (Max.) (Vds = 200V)

4. Enhancement-Mode : Vth = 1.5 ~ 3.5V (Vds =10V, Id = 1mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 10 A

4. Drain Power Dissipation: Pd = 40 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: YTA-630