10N120BND PDF – 1200V, 35A, IGBT – HGTG10N120BND

This post explains for the IGBT.

The Part Number is HGTG10N120BND.

The function of this semiconductor is 1200V, 35A, IGBT.

Manufacturer: Fairchild Semiconductor

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10N120BND image


The 10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.


1. 35A, 1200V, TC = 25°C

2. 1200V Switching SOA Capability

3. Typical Fall Time : 140ns at TJ = 150oC

4. Short Circuit Rating

5. Low Conduction Loss



10N120BND Datasheet