Part Number: 11N60C3, SPP11N60C3
Function: 650V, 11A, Cool MOS Power Transistor
Package: TO-220FP, TO-262, TO-220 Type
Manufacturer: Infineon Technologies
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Description
This is Cool MOS Power Transistor. ( SPP11N60C3. SPI11N60C3, SPA11N60C3 )
Feature
• New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance
Package:
P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO220-3-31 PG-TO262-3 650 0.38 11 PG-TO220 V Ω A • PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP11N60C3 SPI11N60C3 SPA11N60C3 Package PG-TO220-3 PG-TO262-3 Ordering Code Q67040-S4395 Q67042-S4403 Marking 11N60C3 11N60C3 11N60C3 PG-TO220-3-31 SP000216312 Maximum Ratings Parameter Symbol SPP_I ID 11 7 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Page 1 Value SPA Unit A 11 1) 71) 33 340 0.6 11 ±20 ±30 33 W °C V/ns A V A mJ Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V 33 340 0.6 11 ±20 ±30 125 15 Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 7) Rev. 2.6 -55…+150 2005-09-21 SPP11N60C3 SPI11N60C3, SPA11N60C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction – case Thermal resistance, junction – case, FullPAK Thermal resistance, junction – ambient, leaded Thermal resistance, junction – ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 3) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 4) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol min. RthJC RthJC_FP RthJA RthJA_FP RthJA Tsold – Values typ. 35 max. 1 3.8 62 80 62 260 Unit K/W °C Symbol Conditions min. 600 2.1 – Values typ. 700 3 0.1 0.34 0.92 0.86 max. 3.9 Unit V Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=500µA, VGS =VDS VDS=600V, V GS=0V, Tj=25°C Tj=150°C V(BR)DS VGS=0V, ID=11A µA 1 100 100 0.38 nA Ω Gate-source leakage current I GSS VGS=30V, V DS=0V VGS=10V, ID=7A Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open drain Rev. 2.6 Page 2 2005-09-21 SPP11N60C3 SPI11N60C3, SPA11N60C3 Electrical Characteristics Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol gfs Ciss Coss Crss VGS=0V, VDS=0V to 480V Conditions min. VDS≥2*ID*R DS(on)max, ID=7A VGS=0V, VDS=25V, f=1MHz Values typ. 8.3 1200 390 30 45 85 10 5 44 5 max. 70 9 – Unit S pF Effective output capacitance,5) Co(er) energy related Effective output capacitance,6) […]