Part Number: 11N60C3, SPP11N60C3
Function: 650V, 11A, Cool MOS Power Transistor
Package: TO-220FP, TO-262, TO-220 Type
Manufacturer: Infineon Technologies
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Description
“CoolMOS” is not a specific power transistor but rather a trademarked term used by Infineon Technologies AG for a family of high-voltage power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). These MOSFETs are known for their advanced technology and efficiency, resulting in reduced power losses and improved thermal performance, hence the term “CoolMOS.”
11N60C3 is Cool MOS Power Transistor. ( SPP11N60C3. SPI11N60C3, SPA11N60C3 )
Features:
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
Note:
P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO220-3-31 PG-TO262-3 650 0.38 11 PG-TO220 V Ω A • PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP11N60C3 SPI11N60C3 SPA11N60C3 Package PG-TO220-3 PG-TO262-3 Ordering Code Q67040-S4395 Q67042-S4403 Marking 11N60C3 11N60C3 11N60C3 PG-TO220-3-31 SP000216312 Maximum Ratings Parameter Symbol SPP_I ID 11 7 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Page 1 Value SPA Unit A 11 1) 71) 33 340 0.6 11 ±20 ±30 33 W °C V/ns A V A mJ Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V 33 340 0.6 11 ±20 ±30 125 15 Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 7) Rev. 2.6 -55…+150 2005-09-21 SPP11N60C3 SPI11N60C3, SPA11N60C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction – case Thermal resistance, junction – case, FullPAK Thermal resistance, junction – ambient, leaded Thermal resistance, junction – ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 3) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 4) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol min. RthJC RthJC_FP RthJA RthJA_FP RthJA ) […]
11N60C3 PDF Datasheet
