13003ADG PDF Datasheet – 400V, NPN Transistor

Part Number: 13003ADG


Package: TO-251, TO-126, TO-92 Type

Manufacturer: Unisonic Technologies


1 page
13003ADG image


These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.



1. Reverse biased SOA with inductive load @ TC=100°C

2. Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. –

3. 700V blocking capability


Switching regulator’s, inverters – Motor controls – Solenoid/relay drivers – Deflection circuits „ EQUIVALENT CIRCUIT „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13003ADGL-TM3-T 13003ADGP-TM3-T 13003ADGL-T60-F-K 13003ADGP-T60-F-K 13003ADGL-T92-F-B 13003ADGP-T92-F-B 13003ADGL-T92-F-K 13003ADGP-T92-F-K Note: Pin Assignment: B: Base C: Collector E: Emitter Package TO-251 TO-126 TO-92 TO-92 Pin Assignment 123 BCE BCE BCE BCE Packing Tube Bulk Tape Box Bulk 13003ADGL-T60-F-B (1)Packing Type (2)Pin Assignment (3)Package Type (4)Lead Free (1) T: Tube, B: Bluk, K: Bulk (2) refer to Pin Assignment (3) TM3: TO-251, T60: TO-126, T92: TO-92 (4) L: Lead Free, P: Halogen Free www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R223-023.c 13003ADG

„ MARKING PACKAGE TO-251 TO-126 TO-92 Preliminary NPN SILICON TRANSISTOR MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R223-023.c 13003ADG Preliminary NPN SILICON TRANSISTOR „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS Collector-Emitter Voltage VCEO(SUS) 400 Collector-Base Voltage Emitter Base Voltage VCBO VEBO 700 9 Collector Current Continuous Peak (1) IC ICM 1.5 3 Base Current Continuous Peak (1) IB IBM 0.75 1.5 Emitter Current Continuous Peak (1) IE IEM 2.25 4.5 TO-126 1.4 TA=25°C TO-92 1.1 Power Dissipation TO-251 TO-126 PD 1.56 20 TC=25°C TO-92 TO-251 1.5 25 Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. UUNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R223-023.c 13003ADG Preliminary NPN SILICON TRANSISTOR „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS (Note) Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current TC=25°C TC=100°C SECOND BREAKDOWN Second Breakdown Collector Current with bass forward biased Clamped Inductive SOA with base reverse biased ON CHARACTERISTICS (Note) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product Output Capacitance SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time R […]


13003ADG Datasheet