17N80C3 PDF – SPP17N80C3 – 800V, CoolMOS Power Transistor

Part Number: 17N80C3, SPP17N80C3

Function: 800V, 17A, CoolMOS Power Transistor

Package: TO-220-3 Type

Manufacturer: Infineon Technologies

Preview Images:17N80C3 pinout datasheet


17N80C3 is 800V, 17A, CoolMOS Power Transistor.

“CoolMOS” is not a specific power transistor but rather a trademarked term used by Infineon Technologies AG for a family of high-voltage power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). These MOSFETs are known for their advanced technology and efficiency, resulting in reduced power losses and improved thermal performance, hence the term “CoolMOS.”

MOSFETs are widely used in power electronic applications as switching devices, amplifiers, and voltage regulators. They come in various types, such as enhancement-mode (normally off) and depletion-mode (normally on) MOSFETs.


• New revolutionary high voltage technology

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC1) for target applications

• Pb-free lead plating; RoHS compliant

• Ultra low gate charge

• Ultra low effective capacitances

Product Summary :

V DS R DS(on)max @ Tj = 25°C Q g,typ SPP17N80C3 800 V 0.29 Ω 88 nC PG-TO220-3 CoolMOSTM 800V designed for: • Industrial application with high DC bulk voltage • Switching Application ( i.e. active clamp forward ) Type SPP17N80C3 Package PG-TO220-3 Marking 17N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Pulsed drain current2) I D,pulse Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness E AS E AR I AR dv /dt Gate source voltage V GS T C=25 °C T C=100 °C T C=25 °C I D=3.4 A, V DD=50 V I D=17 A, V DD=50 V V DS=0…640 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg Mounting torque M3 and M3.5 screws Rev. 2.91 page 1 Value 17 11 51 670 0.5 17 50 ±20 ±30 227 -55 … 150 60 Unit A mJ A V/ns V W °C Ncm 2011-09-27 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse T C=25 °C dv /dt SPP17N80C3 Value 17 51 4 Unit A V/ns Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction – case R thJC Thermal resistance, junction ambient R thJA leaded Soldering temperature, wave soldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10s min. Values typ. Unit max. – – 0.55 K/W – – 62 – – 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance […]

17N80C3 pdf transistor

17N80C3 PDF Datasheet