17N80C3 – SPP17N80C3 – 800V, CoolMOS Power Transistor

Part Number: 17N80C3, SPP17N80C3

Function: 800V, CoolMOS Power Transistor

Package: TO-220-3 Type

Manufacturer: Infineon Technologies

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This is CoolMOS Power Transistor.


• New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances

Product Summary :

V DS R DS(on)max @ Tj = 25°C Q g,typ SPP17N80C3 800 V 0.29 Ω 88 nC PG-TO220-3 CoolMOSTM 800V designed for: • Industrial application with high DC bulk voltage • Switching Application ( i.e. active clamp forward ) Type SPP17N80C3 Package PG-TO220-3 Marking 17N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Pulsed drain current2) I D,pulse Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness E AS E AR I AR dv /dt Gate source voltage V GS T C=25 °C T C=100 °C T C=25 °C I D=3.4 A, V DD=50 V I D=17 A, V DD=50 V V DS=0…640 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg Mounting torque M3 and M3.5 screws Rev. 2.91 page 1 Value 17 11 51 670 0.5 17 50 ±20 ±30 227 -55 … 150 60 Unit A mJ A V/ns V W °C Ncm 2011-09-27 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse T C=25 °C dv /dt SPP17N80C3 Value 17 51 4 Unit A V/ns Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction – case R thJC Thermal resistance, junction ambient R thJA leaded Soldering temperature, wave soldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10s min. Values typ. Unit max. – – 0.55 K/W – – 62 – – 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance V (BR)DSS V GS=0 V, I D=250 µA V (BR)DS V GS=0 V, I D=17 A V GS(th) V DS=V GS, I D=1.0 mA I DSS V DS=800 V, V GS=0 V, T j=25 °C 800 – 2.1 – V DS=800 V, V GS=0 V, T j=150 °C I GSS V GS=20 V, V DS=0 V R DS(on) V GS=10 V, I D=11 A, T j=25 °C – V GS=10 V, I D=11 A, T j=150 °C – R G f =1 MHz, open drain – – -V 870 – 3 3.9 – 25 µA 150 – 100 nA 0.25 0.29 Ω 0.67 0.85 – Ω Rev. 2.91 page 2 2011-09-27 SPP17N80C3 Parameter Symbol Conditions min. Values typ. Unit max. Dynamic characteristics Input capacitance Output capacitance C iss C oss Effective output capacitance, energy related5) C o(er) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time C o(tr) t d(on) tr t d(off) tf V GS=0 V, V DS=100 V, f =1 MHz V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I […]


17N80C3 Datasheet