20N60S1 Datasheet – 600V, N-ch, Power MOSFET

20N60S1 is one of the types of MOSFETs and is a kind of transistor.

Part Number: FMP20N60S1

Function: 600V, 20A, N-Channel enhancement mode power MOSFET

Package: TO-220AB Type

Manufacturer: Fuji Electric

Image:

20N60S1 mosfet fuji

Description

Transistor 20N60S1 is Super J-MOS series, N-Channel enhancement mode power MOSFET.

With a drain–source breakdown voltage of 600 V and continuous drain current of 20 A, it is well suited for switch-mode power supplies (SMPS), PFC stages, industrial power conversion, lighting ballasts, and motor drives.

 

Features

1. Low on-state resistance

2. Low switching loss

3. easy to use (more controllabe switching dV/dt by Rg)

 

Absolute Maximum Ratings at TC=25°C

1. Drain-Source Voltage : Vds = 600V

2. Gate-Source Voltage: Vgss = ±30

3. Continuous Drain Current: Id = 20A

4. Repetitive and Non-Repetitive Maximum Avalanche Current : IAR = 6.6 A

5. Non-Repetitive Maximum Avalanche Energy : EAS = 472.2 mJ

6. Junction Temperature: Tch=   −55 ~ +150°C

 

20N60S1 Pinout

20N60S1 datasheet pinout

 

Applications

1. Inverters and Converters for solar, UPS, or industrial drives

2. Server, Telecom, Power conditioner system, Power supply

3.High-Voltage DC Motor Controller

 

20N60S1 Datasheet