2N65 PDF Datasheet – 650V, 2A, N-Ch, MOSFET

Part Number: 2N65

Function: 650V, 2A, N-Channel MOSFET Transistor

Package: TO-220C type

Manufacturer: Inchange Semiconductor

Images:

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Description

2N65 is N-Channel MOSFET Transistor.

Features

· Drain Current ID= 2A@ TC=25℃
· Drain Source Voltage- : VDSS= 650V(Min)
· Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max)
· Fast Switching

Applications:

1. Switching power supplies,converters,AC and DC motor controls

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 650 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 2 A

4. Allowable Power Dissipation: Pd = 54 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N65 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage VDS= VGS; ID=250µA IS= 2A ;VGS= 0 RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID= 1A VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=650V; VGS= 0 MIN TYPE MAX UNIT 650 V 2.0 4.0 V 1.4 V 5.0 Ω ±100 nA 10 µA · isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark […]

 

2N65 Datasheet

2N65 pdf