Part Number: 2N65
Function: 650V, 2A, N-Channel MOSFET Transistor
Package: TO-220C type
Manufacturer: Inchange Semiconductor
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Description
2N65 is N-Channel MOSFET Transistor.
Features
· Drain Current ID= 2A@ TC=25℃
· Drain Source Voltage- : VDSS= 650V(Min)
· Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max)
· Fast Switching
Applications:
1. Switching power supplies,converters,AC and DC motor controls
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 650 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 2 A
4. Allowable Power Dissipation: Pd = 54 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N65 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage VDS= VGS; ID=250µA IS= 2A ;VGS= 0 RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID= 1A VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=650V; VGS= 0 MIN TYPE MAX UNIT 650 V 2.0 4.0 V 1.4 V 5.0 Ω ±100 nA 10 µA · isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark […]
2N65 Datasheet
