2N04H4 PDF Datasheet – 40V, 80A, N-Ch, MOSFET

This post explains for the semiconductor 2N04H4.

The Part Number is SPI80N04S2-H4, SPP80N04S2-H4, SPB80N04S2-H.

The function of this semiconductor is MOSFET ( OptiMOS Power-Transistor).

Manufacturer: Infineon Technologies

Preview images :

2N04H4 pinout datasheet


This is OptiMOS Power-Transistor.

OptiMOS is a brand of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) products manufactured by Infineon Technologies. Power MOSFETs are electronic devices used for switching and amplification in power applications, particularly in areas where high efficiency and low power losses are essential.

OptiMOS power transistors find application in a wide range of industries and systems, including power supplies, motor drives, renewable energy systems, automotive electronics, consumer electronics, and more. They contribute to improved efficiency, reduced power losses, and enhanced performance in power electronics applications.

Feature :

• N-Channel • Enhancement mode

• 175°C operating temperature

• Avalanche rated • dv/dt rated

Product Summary :

VDS 40 V RDS(on) 4 mΩ ID 80 A P- TO263 -3-2 P- TO220 -3-1 Type SPP80N04S2-H4 SPB80N04S2-H4 SPI80N04S2-H4 Package Ordering Code P- TO220 -3-1 Q67060-S6014 P- TO263 -3-2 Q67060-S6013 P- TO262 -3-1 Q67060-S6014 Marking 2N04H4 2N04H4 2N04H4 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C ID Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80 A , VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=80A, VDS=32V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 80 80 320 660 25 6 ±20 300 -55… +175 5 […]

2N04H4 pdf

2N04H4 Datasheet