2SC1959 Transistor – 30V, 0.5A, NPN Transistor, TO-92

Part Number: C1959

Function: 30V, 500mA, NPN Transistor

Package: TO-92 Type

Manufacturer: Toshiba, Micro Commercial Components

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2SC1959 transistor

 

Description

The 2SC1959 is a silicon NPN bipolar junction transistor (BJT) primarily designed for general-purpose amplifier applications.

1. Voltage Ratings:

(1) Collector-Base Voltage (VCBO): Typically around 35V (Volts). This is the maximum voltage that can be applied between the collector and base terminals when the emitter is open.

(2) Collector-Emitter Voltage (VCEO): Typically around 30V (Volts). This is the maximum voltage that can be applied between the collector and emitter terminals when the base is open.
Current Ratings:

2. Continuous Collector Current (IC):

Typically around 500mA (Milliamperes). This is the maximum continuous current that the transistor can handle flowing from the collector to the emitter.

Features

1. Excellent hFE linearity : hFE (2) = 25 (min): VCE = 6 V, IC = 400 mA

2. 1 watt amplifier applications.

3. High Transition Frequency

4. Complementary to 2SA562TM.

Pinouts

2sc1959 equivalent pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Base Voltage : Vcbo = 35 V

2. Collector to Emitter Voltage : Vceo = 30 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 500 mA

5. Total Dissipation : Pc = 500 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications

1. Audio Frequency Low Power Amplifier

2. Driver Stage Amplifier

3. Switching

2SC1959 Datasheet PDF

2SA562 Datasheet PDF