Part Number: D560
Function: 100V, ±5A, NPN Darlington Transistor
Package: TO-220AB Type
Manufacturer: NEC (Renesas Technology)
Image and Pinouts:
Description
This is 100V, 5A, NPN Silicon Epitaxial Power Transistor.
The D560 is a mold power transistor developed for low frequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC output of devices such as pulse motor drivers and relay drivers, and PC terminals.
Features
1. C-to-E reverse diode inserted
2. Low collector saturation voltage
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 150 V
2. Collector to Emitter Voltage: Vceo = 100 V
3. Emitter to Base Voltage: Vebo = 7.0 V
4. Collector Current: Ic = ± 5.0 A
5. Total Power Dissipation : Pc = 1.5 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Other data sheets are available within the file: 2SD560
D560 Datasheet
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