Part Number: 30J324, GT30J324
Function: 600V, 30A, N-Channel, IGBT ( Insulated Gate Bipolar Transistor )
Package: TO-3P Type
Manufacturer: Toshiba Semiconductor
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Description
The 30J324 is Silicon N Channel IGBT.
Applications:
1. High Power Switching
2. Fast Switching
Features
1. The 4th generation
2. Enhancement-mode
3. Fast switching (FS): Operating frequency up to 50 kHz (reference)
(1) High speed: tf = 0.05 µs (typ.)
(2) Low switching loss: Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.)
4. Low saturation voltage: VCE (sat) = 2.0 V (typ.)
5. FRD included between emitter and collector
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 600 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector current : Ic = 30 A
4. Collector dissipation : Pc = 170 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
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