This post explains for the IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
The Part Number is 30N60A4D, HGT1N30N60A4D.
The function of this semiconductor is 600V, SMPS Series N-Channel IGBT.
The package is SOT-227 Type
Manufacturer: Fairchild Semiconductor
Preview images :
The 30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345.
• 100kHz Operation At 390V, 20A
• 600V Switching SOA Capability
• Typical Fall Time . 58ns at TJ = 125°C
• Low Conduction Loss […]
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to Emitter Voltage: Vces = 600 V
2. Gate to Emitter Voltage: VGes = ± 20 V
3. Collector Current: Ic = 96 A
4. Drain power dissipation: PD = 255 W
5. Operating Junction Temperature: Tch = -55 to +150 °C
6. Storage temperature: Tstg = -55 to +150 °C