3DD13009 PDF Datasheet – Vceo=400V, 12A, NPN Transistor

This post explains for the transistor.

The Part Number is 3DD13009.

The function of this semiconductor is NPN Transistor.

The package is TO-220, TO-3PN Type

Manufacturer: LGE

Preview images :

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3DD13009 pdf datasheet


3DD13009 is 400V, 12A, Silicon NPN Power Transistor. A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

NPN Configuration:

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.


1. Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.)

2. Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A

3. Switching Time : tf= 0.7μs(Max.)@ IC= 8.0A

4. 100% tested

5. Minimum Lot-to-Lot variations for robust device performance and reliable operation […]

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3DD13009 transistor equivalent

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 700 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 9 V

4. Collector Current: Ic = 12 A

5. Collector Power Dissipation : Pc = 130 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C


1. Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switch mode applications such as switching regulators, inverters, Motor controls, Solenoid/Relay drivers and deflection circuit.

3DD13009 PDF Datasheet

3DD13009 pdf

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