48LC8M16A2 PDF – 2 Meg x 16 x 4 Banks SDR SDRAM

This post explains for the SDRAM.

The Part Number is 48LC8M16A2, MT48LC8M16A2.

The function of this semiconductor is 2 Meg x 16 x 4 Banks SDR SDRAM.

Manufacturer: Micron Technology

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48LC8M16A2 pdf datasheet

Description

The 48LC8M16A2 is 2 Meg x 16 x 4 Banks SDR SDRAM.

Read and write accesses to the SDRAM are burst-oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command.

The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA[1:0] select the bank; A[11:0] select the row). The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access.

The SDRAM provides for programmable read or write burst lengths (BL) of 1, 2, 4, or 8 locations, or the full page, with a burst terminate option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence.

Features:

• PC100- and PC133-compliant
• Fully synchronous; all signals registered on positive edge of system clock
• Internal, pipelined operation; column address can be changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths (BL): 1, 2, 4, 8, or full page
• Auto precharge, includes concurrent auto precharge and auto refresh modes
• Self refresh modes: Standard and low power (not available on AT devices) […]

48LC8M16A2 micron

48LC8M16A2 PDF Datasheet