50N60 IGBT – 600V, 60A, MOSFET, Transistor, IXRH50N60

Part Number: 50N60, IXRH50N60

Function: 600V, 60A, IGBT, Transistor

Package: TO-247AD Type

Manufacturer: IXYS

Images:50N60 pdf igbt


50N60 is 600V, 60A, IGBT with Reverse Blocking capability. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.

These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.


1. IGBT with NPT (non punch through) structure

2. Reverse blocking capability independent from gate voltage

(1) Function of series diode monolithically integrated
(2) No external series diode required
(3) Soft reverse recovery

3. positive temperature coefficient of saturation voltage


50N60 datasheet ixys

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 60 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 60 A

4. Collector dissipation : Ptot = 300 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +125 °C



1. Current source inverters

2. Matrix converters

3. Bi-directional switches

4. Resonant converters

50N60 PDF Datasheet