6R600P PDF Datasheet – 650V, MOSFET – IPB60R600CP

Part Number: 6R600P

Function: 650V, 6.1A, MOSFET

Package: TO-263 Type

Manufacturer: Infineon Technologies


1 page
6R600P image


This is 650V, Cool MOSFET (Power Transistor).


• Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max @ Tj =25°C Q g,typ IPB60R600CP 650 V 0.6 Ω 21 nC PG-TO263 CoolMOS CP is designed for: • Hard switching SMPS topologies Type IPB60R600CP Package PG-TO263 Marking : 6R600P

Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness Gate source voltage ID I D,pulse E AS E AR I AR dv /dt V GS T C=25 °C T C=100 °C T C=25 °C I D=2.2 A, V DD=50 V I D=2.2 A, V DD=50 V V DS=0…480 V static AC (f >1 Hz) Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg Rev.2.0 page 1 Value 6.1 3.8 15 144 0.2 2.2 50 ±20 ±30 60 -55 … 150 Unit A mJ A V/ns V W °C 2008-02-15 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse T C=25 °C dv /dt IPB60R600CP Value 3.3 15 15 Unit A V/ns Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction – case R thJC – – 2.1 K/W Thermal resistance, junction ambient R thJA R thJA leaded SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified – – 62 – 62 35 – Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance V (BR)DSS V GS=0 V, I D=250 µA V GS(th) V DS=V GS, I D=220µA I DSS V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C I GSS V GS=20 V, V DS=0 V R DS(on) V GS=10 V, I D=3.3 A, T j=25 °C V GS=10 V, I D=3.3 A, T j=150 °C R G f =1 MHz, open drain 600 2.5 – – – 3 – 10 0.54 1.5 1.5 -V 3.5 1 µA 100 nA 0.6 Ω -Ω Rev.2.0 page 2 2008-02-15 Parameter Dynamic characteristics Symbol Conditions IPB60R600CP min. Values typ. Unit max. Input capacitance Output capacitance C iss V GS=0 V, V DS=100 V, – 550 – pF C oss f =1 MHz – 28 – Effective output capacitance, energy related5) C o(er) Effective output capacitance, time related6) C o(tr) V GS=0 V, V DS=0 V to 480 V – 26 – 67 – Turn-on delay time Rise time Turn-off delay time Fall time t d(on) – 17 – ns t r V DD=400 V, – 12 – V GS=10 V, I D=3.3 A, t d(off) R G=23.1 Ω – 75 – t f – 17 – Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Q gs Q gd Qg V plateau V DD=480 V […]


6R600P Datasheet