Part Number: 7D0N65F1, KHB7D0N65F1
Function: 650V, N-Channel MOSFET
Package: TO-220AB Type
Manufacturer: KEC
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Description
SEMICONDUCTOR TECHNICAL DATA General Description KHB7D0N65P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB7D0N65P1
Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
Features
VDSS=650V, ID=7A Drain-Source ON Resistance : RDS(ON)=1.4 @VGS=10V K M L J D N N P Qg(typ.)= 32nC H MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ) SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 160 1.28 150 -55 150 N DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q 1 2 3 RATING KHB7D0N65P1 KHB7D0N65F1 650 30 7 4.2 28 212 1.6 4.5 52 0.42 7- 4.2- 28- UNIT V V 1. GATE 2. DRAIN 3. SOURCE TO-220AB KHB7D0N65F1 A A F O C mJ mJ V/ns W W/ E G P B K L J D M M H Q Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient DIM MILLIMETERS _ 0.2 10.16 + A _ 0.2 15.87 + B _ 0.2 C 2.54 + _ 0.1 D 0.8 + _ 0.1 E 3.18 + _ 0.1 F 3.3 + _ 0.2 12.57 + G _ 0.1 0.5 + H J 13.0 MAX _ 0.1 K 3.23 + L 1.47 MAX _ 0.2 2.54 + M _ 0.2 N 4.7 + _ 0.2 O 6.68 + P 6.5 _ 0.2 Q 2.76 + RthJC RthCS RthJA 0.78 0.5 62.5 2.4 62.5 /W /W /W 1 2 3 1. GATE 2. DRAIN 3. SOURCE TO-220IS – : Drain current limited by maximum junction temperature. D G S 2006. 2. 20 Revision No : 1 1/7 KHB7D0N65P1/F1 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=650V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=3.75A 650 2 0.8 1.2 10 4 100 1.4 V V/ A V nA Dynamic Total Gate Charge Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance VDS=520V, ID=7.0A VGS=10V (Note4,5) – 32 5.4 12.6 20 40 125 80 1310 113 11.4 40 45 90 260 170 1700 147 14.8 pF ns nC VDD=325V RL=46 RG=25 (Note4,5) – VDS=25V, VGS=0V, f=1.0MHz – Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Revers […]
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