Part Number: 9435
Function: – 30V, – 5.1A, P-Channel Enhancement Mode MOSFET
Package: SOP 8 Pin Type
Manufacturer: Tuofeng Semiconductor
Images:
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Description
The 9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications.
Features
1. High Power and current handing capability
2. Lead free product is acquired
3. Surface Mount Package
Application:
1. PWM applications
2. Load switch
3. Power management
Absolute Maximum Ratings (T A = 25°C unless otherwise noted) Symbol VDSS VGSS ID IDM Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous TA = 25°C Maximum Drain Current – Pulsed Rating -30 ±20 -4.6 -20 Unit V A TF reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd 9435 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol PD TJ)TSTG RθJA Parameter Maximum Power Dissipation TA = 25°C TA = 100°C Maximum Operating and Storage Junction Temperature Thermal Resistance – Junction to Ambient Rating 2.5 1.0 -55 to 150 50 Unit W °C °C/W Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Condition Static BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250µA IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA IGSS Gate Leakage Current VGS=±20V, VDS =0V VGS=-10V, ID=-5.3A RDS(ON). […]
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