Part Number: 9D5N20P, KHB9D5N20P
Function: 200V, 9.5A, MOSFET
Package: TO-220AB Type
Manufacturer: KEC
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Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies.
SEMICONDUCTOR TECHNICAL DATA General Description KHB9D5N20P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB9D5N20P DIM MILLIMETERS _ 0.2 9.9 + 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. Features VDSS=200V, ID=9.5A Drain-Source ON Resistance : RDS(ON)=400m Qg(typ.)=18.5nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB MAXIMUM RATING (Tc=25 ) RATING KHB9D5N20F A F C CHARACTERISTIC SYMBOL KHB9D5N20F UNIT KHB9D5N20P KHB9D5N20F2 E O DIM B MILLIMETERS Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 87 0.7 9.5 38 200 30 9.5- V V A 38- K L M J R 180 8.7 5.5 40 0.32 150 mJ mJ V/ns 2.76 + G 1. GATE 2. DRAIN 3. SOURCE TO-220IS (1) KHB9D5N20F2 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient -55 150 S A F C P RthJA 62.5 62.5 /W K L L R G B RthJC 1.44 3.13 /W E DIM MILLIMETERS – : Drain current limited by maximum junction temperature. PIN CONNECTION D M D D N N H G 1 2 3 A B 1. GATE 2. DRAIN 3. SOURCE S TO-220IS 2008. 12. 19 Revision No : 2 1/7 KHB9D5N20P/F/F2 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Drain Cut-off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance BVDSS BVDSS/ Tj Vth IDSS IGSS RDS(ON) gFS ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=VGS, ID=250 A VDS=200V, VGS=0V, VGS= 30V, VDS=0V VGS=10V, ID=4.75A VDS=40V, ID=4.75A (Note4) 200 2.0 0.19 345 6.7 4.0 1 100 400 V V/ V A nA m S Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Cap […]
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