This is a PNP transistor.
Part Number: A1306
Function: 160V, 1.5A, PNP Transistor
Package: TO-220F
Manufacturer: Toshiba
Images:
Description:
A1306 is -160V, -1.5A, PNP Transistor. ( Complementary to 2SC3298, 2SC3298A, 2SC3298B )
- Structure: A PNP transistor has a sandwich-like structure, consisting of a thin N-type layer (base) sandwiched between two P-type layers (emitter and collector).
- Polarity: In a PNP transistor, the majority charge carriers are holes, which flow from the emitter to the collector. The emitter is negative relative to the base, and the collector is positive relative to the base.
- Current flow: When a small current is applied to the base terminal, it allows a much larger current to flow from the emitter to the collector. This is called amplification or gain, and it makes the PNP transistor useful as an electronic switch or amplifier.
- Voltage levels: The voltage levels in a PNP transistor are opposite to those in an NPN transistor. In a NPN transistor, the base-emitter junction is forward-biased and the collector-base junction is reverse-biased.
- Biasing: PNP transistors are biased in the opposite direction to NPN transistors. To turn on a PNP transistor, the base must be more negative than the emitter, and to turn it off, the base must be more positive than the emitter.
Absolute maximum ratings ( Ta=25°C )
1. Collector-Emitter Voltage : -160 V
2. Collector-Base Voltage : -160 V
3. Emitter-Base Voltage : -5 V
4. Collector Current : -1.5 A
5. Collector Dissipation : 20 W
6. DC Current Gain (hfe) : 70 to 240
7. Transition Frequency : 100 MHz
8. Operating and Storage Junction Temperature Range : -55 to +150 °C
Applications:
1. Power amplifier
2. Driver stage amplifier
A1306 PDF Datasheet
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