Part Number: AON7410
Function: 30V N-Channel MOSFET
Package: DFN 3×3 EP Type
Manufacturer: Alpha & Omega Semiconductors
Images:
1 page
2 page
Description
The AON7410 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC – DC converters and Load Switch applications.
Features
VDS (V) = 30V ID = 24A RDS(ON) < 20mΩ RDS(ON) < 26mΩ 100% UIS Tested 100% Rg Tested (VGS = 10V) (VGS = 10V) (VGS = 4.5V) Top View DFN 3×3 EP Bottom View D Top View 1 2 3 4 8 7 6 5 G S Pin 1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain A Current Avalanche Current C C C Maximum 30 ±20 24 15 50 9.5 7.7 17 14 20 8.3 3.1 2 -55 to 150 Units V V VGS TC=25° C TC=100° C TA=25° C TA=70° C IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG ID IDM A A mJ Repetitive avalanche energy L=0.1mH TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C W Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Case B ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 5 Max 40 75 6 Units ° C/W ° C/W ° C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7410 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55° C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=8A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=7A Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t ≤ 10s value and the […]
3 page
