Part Number: B1151, 2SB1151
Function: – 60V, – 5A, PNP Transistor
Package: TO-126 Type
Manufacturer: NEC
Images:
Description
B1151 is PNP Silicon Power Transistor. The 2SB1151 is a Low Vce(sat) transistor which has a large current capability and wide SOA. It is suitable for DC-DC converter, or driver of solenoid or motor.
The operation of a PNP transistor is based on the biasing of its three layers: the emitter, base, and collector. The emitter is connected to the positive power supply, the base is the control terminal, and the collector is connected to the load or circuit.
When a small current flows into the base terminal, it controls a larger current flowing between the emitter and collector. The transistor amplifies the input signal and can be used to switch larger currents on and off in various electronic circuits.
Silicon PNP transistors offer advantages such as high gain, low noise, and good thermal stability. They are widely used in many applications, including audio amplifiers, power supplies, voltage regulators, and digital logic circuits.
Features
1. Low Collector Saturation Voltage.
2. Large Current
3. High Total power dissipation : Pt = 1.3 W
4. Complementary to 2SD1691
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = – 60 V
2. Collector to Emitter Voltage: Vceo = – 60 V
3. Emitter to Base Voltage: Vebo = – 7 V
4. Collector Current: Ic = – 5 A
5. Collector Dissipation : Pc = 1.3 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
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B1151 PDF Datasheet
