B1274 Transistor – 60V, 3A, PNP, Equivalent, 2SB1274 ( PDF )

Part Number: B1274, 2SB1274

Function: – 60V, – 3A, Silicon PNP Transistor

Package: TO-220ML Type

Manufacturer: Sanyo Semicon Device

Images:

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B1274 image

Description

B1274 is 60V, 3A, PNP Epitaxial Planar Silicon Transistor. A PNP transistor is one of the semiconductor components used in electrical engineering and electronic circuit design, belonging to the Bipolar Junction Transistor (BJT) family. The PNP transistor consists of three layers of semiconductor material: P-type, N-type, and P-type, each with different charges. The name PNP transistor stands for “Positive-Negative-Positive,” reflecting the characteristics of these three semiconductor layers.

PNP transistors comprise the following key components:

1. Emitter: The emitter is the first layer and is made of P-type semiconductor material. The emitter serves as the primary source of current.

2. Base: The base is the second layer and is made of N-type semiconductor material. The base controls the current between the emitter and collector.

3. Collector: The collector is the third layer and is made of P-type semiconductor material. The collector collects the current, which flows from the emitter through the base.

PNP transistors control the flow of a large current (collector current) between the emitter and collector using a small current applied to the base (base current). When a base current flows, the PNP transistor permits the flow of electrons from the emitter to the collector, resulting in an increase in collector current. Reducing the base current reduces the collector current. Consequently, PNP transistors are valuable electronic components for controlling large output currents with small input currents.

PNP transistors find applications in amplifiers, switches, amplitude modulators, power amplifiers, and various circuit designs, playing a crucial role in electronic devices and circuitry.

Features

1. Wide ASO (Adoption of MBIT process).

2. Low saturation voltage.

3. High reliability.

4. High breakdown voltage.

5. Micaless package facilitating mounting

 

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Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 60 V

2. Collector to Emitter Voltage: Vceo = – 60 V

3. Emitter to Base Voltage: Vebo = – 6 V

4. Collector Current: Ic = – 3 A

5. Collector Dissipation : Pc = 2 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. General power amplifier

 

B1274 PDF Datasheet