B30H100G PDF Datasheet – 100V, 30A, Switch-mode Power Rectifier

This post explains for the diode.

The Part Number is MBR30H100CTG, MBRF30H100CTG

The Marking : B30H100G

The function of this semiconductor is Switch-mode Power Rectifier.

The package is TO-220 Type

Manufacturer: ON Semiconductor

Preview images :

1 page
transistor B30H100G pdf datasheet


B30H100G is 100V, 30A, Switch‐mode Power Rectifier.

The Schottky Barrier Diode (SBD) is formed by the junction of a metal contact and a semiconductor material, typically silicon or gallium arsenide. Unlike a p-n junction diode, which uses a p-type and an n-type semiconductor material, the SBD uses a metal and a semiconductor material. The metal is chosen for its low work function, which results in a small barrier height at the metal-semiconductor interface, allowing for efficient carrier injection.

The main advantage of an SBD is its fast switching speed and low forward voltage drop, which makes it ideal for high-frequency and high-speed applications. However, SBDs have a relatively low reverse voltage rating compared to p-n junction diodes and can suffer from thermal instability due to the metal-semiconductor interface.

Features and Benefits :

1. Low Forward Voltage: 0.67 V @ 125°C

2. Low Power Loss/High Efficiency

3. High Surge Capacity

4. 175°C Operating Junction Temperature

5. 30 A Total (15 A Per Diode Leg)

6. These are Pb−Free Devices


1. Power Supply – Output Rectification

2. Power Management

3. Instrumentation


B30H100G PDF Datasheet

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