Part Number: B649, 2SB649
Function: – 120V, -1.5A, PNP Transistor
Package: SOT-89, TO-126, TO-126C, TO-92 Type
Manufacturer: Unisonic Technologies
Images:
Description
B649 is -120V, 1.5A, PNP SILICON TRANSISTOR. A PNP transistor is a type of bipolar junction transistor (BJT) with a different structure and polarity compared to an NPN transistor.
Here are characteristics of PNP transistors:
1. Structure: A PNP transistor has a sandwich-like structure, consisting of a thin N-type layer (base) sandwiched between two P-type layers (emitter and collector).
2. Polarity: In a PNP transistor, the majority charge carriers are holes, which flow from the emitter to the collector. The emitter is negative relative to the base, and the collector is positive relative to the base.
3. Current flow: When a small current is applied to the base terminal, it allows a much larger current to flow from the emitter to the collector. This is called amplification or gain, and it makes the PNP transistor useful as an electronic switch or amplifier.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = – 180 V
2. Collector to Emitter Voltage: Vceo = – 120 V
3. Emitter to Base Voltage: Vebo = – 5 V
4. Collector Current: Ic = – 1.5 A
5. Junction Temperature: Tj = 150°C
6. Storage Temperature: Tsg = -55 ~ +150°C
Applications:
1. BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 SOT-89 Applications –
2. Low frequency power amplifier complementary pair with UTC 2SB669/A
