B649A PDF Datasheet – 160V, 1.5A, PNP Transistor – 2SB649A

Part Number: B649A, 2SB649A

Function: 160V, 1.5A, PNP Transistor

Package: TO-92, TO-126 Type

Manufacturer: Unisonic Technologies


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B649A image



1 2SB649/A BIPOLAR POWER GENERAL PURPOSE TRANSISTOR Applications – Low frequency power amplifier complementary pair with UTC 2SB669/A SOT-89 1 TO-126 1 TO-126C 1 TO-92 *Pb-free plating product number: 2SB649L/2SB649AL ORDERING INFORMATION Order Number Normal Lead Free Plating  (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel (2) AB3: SOT-89, T6C: TO-126C, T60: TO-126, T 92: TO-92 (3) x: refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-006,D 2SB649/A PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Collector Power Dissipation Junction Temperature Storage Temperature TO-126/TO-126C TO-92 SOT-89 2SB649 2SB649A SYMBOL VCBO VCEO VEBO IC lC(PEAK) PD TJ TSTG PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25 , unless otherwise specified) RATING -180 -120 -160 -5 -1.5 -3 1.4 1 500 +150 -40 ~ +150 UNIT V

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25 , unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector to Base Breakdown Voltage BVCBO IC=-1mA, IE=0 Collector to Emitter Breakdown 2SB649   […]

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B649A Datasheet