B772P Transistor – PNP, 30V, 3A, TO-126, 2SB772 – NEC

What is B772P?

This is a PNP bipolar junction transistor (BJT) designed for high-speed switching applications.

Part Number: B772P, 2SB772

Function: -30V, -3A, PNP Transistor

Package: TO-126 Type

Manufacturer: NEC


1 page
B772P transistor pinout


The B772P is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

PNP Configuration:

1. Emitter: The emitter is the first layer and is made of P-type semiconductor material. The emitter serves as the primary source of current.

2. Base: The base is the second layer and is made of N-type semiconductor material. The base controls the current between the emitter and collector.

3. Collector: The collector is the third layer and is made of P-type semiconductor material. The collector collects the current, which flows from the emitter through the base.


Advantages Vs Disadvantages


1. High voltage and current capacity

2. Low saturation voltage for efficient switching

3. Complementary NPN transistor available for use in push-pull circuits


1. Relatively low DC current gain compared to other transistors

2. May not be suitable for low power applications due to its high power dissipation rating


• Low saturation voltage VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A)

• Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = −2 V, IC = −1 A)

• Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator.


2 page
B772P pdf datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 40 V

2. Collector to Emitter Voltage: Vceo = – 30 V

3. Emitter to Base Voltage: Vebo = – 5 V

4. Collector Current: Ic = – 3A

5. Collector Dissipation : Pc = 1W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

B772P PDF Datasheet

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