BN1F4M PDF Datasheet – 50V, 0.1A, PNP Transistor

Part Number: BN1F4M

Function: 50V, 0.1A, PNP SIlicon Transistor

Manufacturer: NEC

Images:BN1F4M pinout datasheet

Description

This is 50V, 100mA, PNP Silicon Transistor. The BN1F4M is designed for use in medium speed switching circuit.

A PNP transistor is a type of bipolar junction transistor (BJT) with a different structure and polarity compared to an NPN transistor.

Here are characteristics of PNP transistors:

1. Structure: A PNP transistor has a sandwich-like structure, consisting of a thin N-type layer (base) sandwiched between two P-type layers (emitter and collector).

2. Polarity: In a PNP transistor, the majority charge carriers are holes, which flow from the emitter to the collector. The emitter is negative relative to the base, and the collector is positive relative to the base.

3. Current flow: When a small current is applied to the base terminal, it allows a much larger current to flow from the emitter to the collector. This is called amplification or gain, and it makes the PNP transistor useful as an electronic switch or amplifier.

Features:

1. Bias resistors built-in type PNP transistor equivalent circuit.

BN1F4M pdf transistor

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 60 V

2. Collector to Emitter Voltage: Vceo = – 50 V

3. Emitter to Base Voltage: Vebo = – 10 V

4. Collector Current: Ic = – 100 mA

5. Total Power Dissipation : Pc = 250 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

BN1F4M PDF Datasheet

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