Part Number: C1971, 2SC1971
Function: 17V, 2A, Silicon NPN Transistor
Package: TO-220 Type
Manufacturer: Mitsubishi Electric Semiconductor
The C1971 is a silicon NPN epitaxial planar type transistor designed for RF power amplifers on VHF band mobile radio applications.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 35 V
2. Collector to Emitter Voltage: Vceo = 17 V
3. Emitter to Base Voltage: Vebo = 4 V
4. Collector Current: Ic = 2 A
5. Collector Dissipation : Pc = 1.5 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
1. 4 to 5 watts ouput power amplifiers in VHF band applications.