Part Number: C2750
Function: 100V, 15A, Silicon NPN Power Transistor
Package: TO-3PN type
Manufacturer: INCHANGE
Images:
Description
C2750 is 100V, 15A, Silicon NPN Power Transistor. A NPN transistor is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.
The NPN transistor is used to amplify or switch electronic signals and is widely used in many electronic circuits. It works by controlling the current flow between the collector and emitter terminals through the base terminal.
When a small current is applied to the base, it controls a much larger current between the collector and emitter, making the NPN transistor an effective amplifier or switch.
Characteristics:
1. Bipolar Junction: NPN transistors are bipolar junction transistors (BJT), meaning they have a structure consisting of three regions of alternating P-type and N-type semiconductors.
2. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators.
3. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.
Features:
1. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)
2. High Current Capability
3. High Power Dissipation
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 150 V
2. Collector to Emitter Voltage: Vceo = 100 V
3. Emitter to Base Voltage: Vebo = 7 V
4. Collector Current: Ic = 15 A
5. Collector Power Dissipation : Pc = 100 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Applications:
1. Designed for high speed, high current switching industrial applications.