Part Number: C2750
Function: 100V, 15A, Silicon NPN Power Transistor
Package: TO-3PN type
Manufacturer: INCHANGE
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Description
This is Silicon NPN Power Transistor.
1. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)
2. High Current Capability
3. High Power Dissipation
Applications:
Designed for high speed, high current switching industrial applications.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 150 V
2. Collector to Emitter Voltage: Vceo = 100 V
3. Emitter to Base Voltage: Vebo = 7 V
4. Collector Current: Ic = 15 A
5. Collector Power Dissipation : Pc = 100 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC2750 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage 10 μA ICER Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 100V; RBE= 50Ω; Ta= 125℃ VCE= 100V;VBE(off)= -1.5V; VCE= 100V;VBE(off)= -1.5V;Ta=125℃ VEB= 5V; IC= 0 1.0 mA 10 500 μA 10 μA hFE-1 DC Current Gain IC= 5A; VCE= 5V 30 120 hFE-2 DC Current Gain IC= 10A; VCE= 5V 20 Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= 10A, IB1= -IB2= 1A, VCC≈ 50V; RL= 5Ω 1.0 μs 1.5 μs 0.3 μs hFE-1 Classifications ML K 30-60 40-80 60-120 isc website：www.iscsemi.cn 2 […]