Part Number: C4977, 2SC4977
Function: 400V, 7A, NPN Transistor
Package: TO-220F Type
Manufacturer: INCHANGE Semiconductor
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Description
C4977 is Silicon NPN Power Transistor.
1. Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min)
2. Fast Switching Speed
3. Collector-Emitter Saturation Voltage: VCE(sat)= 0.8V(Max.)@ IC= 4.0A
Applications:
Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulator’s, inverters, DC-DC converter.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 450 V
2. Collector to Emitter Voltage: Vceo = 400 V
3. Emitter to Base Voltage: Vebo = 8 V
4. Collector Current: Ic = 7 A
5. Collector Dissipation : Pc = 40 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified :
SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC4977 MAX UNIT VCEO(SUS) V(BR)CBO V(BR)EBO Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC= 0.1A; IB= 0 IC= 1mA; IE= 0 IE= 1mA; IC= 0 IC= 4A; IB= 0.8A IC= 4A; IB= 0.8A VCB= 450V; IE= 0 VEB= 8V; IC= 0 IC= 4A ; VCE= 5V 400 450 8 0.8 1.2 V V V V V μA μA VCE(sat) VBE(sat) ICBO IEBO hFE Collector Cutoff Current Emitter Cutoff Current DC Current Gain 100 100 10 Switching times Turn-on Time IC= 5A , IB1= -IB2=1A RL= 30Ω; VCC= 150V 1.0 μs μs μs ton tstg tf Storage Time Fall Time 2.5 0.5 isc Website：www.iscsemi.cn 2 […]