C5129 PDF – Vceo=600V, NPN Transistor, 2SC5129 – Toshiba

Part Number: C5129, 2SC5129

Function: Vceo=600V, 10A, NPN Transistor

Package: TO-3P, 2-16E3BA Type

Manufacturer: Toshiba


C5129 PDF Transistor


C5129 is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.

The NPN transistor is used to amplify or switch electronic signals and is widely used in many electronic circuits. It works by controlling the current flow between the collector and emitter terminals through the base terminal.

When a small current is applied to the base, it controls a much larger current between the collector and emitter, making the NPN transistor an effective amplifier or switch.

Characteristics of NPN Transistors:

1. Bipolar Junction: NPN transistor is a BJT (Bipolar Junction Transistor). In other words, it has a structure composed of three regions alternating between N-type semiconductor, P-type semiconductor, and N-type semiconductor.

2. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators.

3. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.

4. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source.

5. Inverted Output: NPN transistors are known for producing an inverted output relative to their input. That is, if the input signal is high, the output signal will be low, and vice versa. This behavior is due to the way the transistor is designed and is an important characteristic for many electronic applications.


1. Horizontal deflection output for high resolution display, color TV

C5129 pinout toshiba

Absolute maximum ratings ( Ta=25°C ):

1. Collector to Base Voltage: Vcbo = 1500 V

2. Collector to Emitter Voltage: Vceo = 600 V

3. Emitter to Base Voltage: Vebo = 5V

4. Collector Current: Ic = 10 A

5. Total Dissipation : Pc = 50 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C


C5129 PDF Datasheet

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