C5353 PDF Datasheet – 800V, 3A, NPN Transistor, 2SC5353

Part Number: C5353, 2SC5353

Function: 800V, 3A, NPN Transistor

Package: TO-220 Type

Manufacturer: Toshiba

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C5353 pdf pinout


C5353 is Silicon NPN Triple Diffused Type Transistor. This Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

NPN Configuration:

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.


1. Excellent switching times: tr = 0.7 μs (max), tf = 0.5 μs (max)

2. High collectors breakdown voltage: VCEO = 800 V


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C5353 transistor amplifier

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 900 V

2. Collector to Emitter Voltage: Vceo = 800 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 3 A

5. Collector Dissipation : Pc = 2 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C



1. Switching Regulator and High Voltage Switching

2. High-Speed DC-DC Converter

C5353 PDF Transistor Datasheet

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