Part Number: 2SC5353
Function: 800V, 3A, NPN Transistor
Package: TO-220 Type
Manufacturer: Toshiba
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Description
C5353 is Silicon NPN Triple Diffused Type Transistor. This Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.
Features
1. Excellent switching times: tr = 0.7 μs (max), tf = 0.5 μs (max)
2. High collectors breakdown voltage: VCEO = 800 V
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Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 900 V
2. Collector to Emitter Voltage: Vceo = 800 V
3. Emitter to Base Voltage: Vebo = 7 V
4. Collector Current: Ic = 3 A
5. Collector Dissipation : Pc = 2 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Applications
1. Switching Regulator and High Voltage Switching
2. High-Speed DC-DC Converter
C5353 PDF Transistor Datasheet
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