C5696 PDF Datasheet – 800V, 12A, NPN Transistor – Sanyo

This post explains for the transistor.

The Part Number is 2SC5696, C5696.

The function of this semiconductor is 800V, 12A, NPN Transistor.

The package is : TO-3PMLH Type

Manufacturer: Sanyo

Preview images :

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C5696 pdf pinout


The C5696 is 800V, 12A, NPN Triple Diffused Planar Silicon Transistor.

A NPN transistor is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.

When a small current is applied to the base, it controls a much larger current between the collector and emitter, making the NPN transistor an effective amplifier or switch.

NPN Configuration:

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.


• High speed.

• High breakdown voltage(VCBO=1600V).

• High reliability(Adoption of HVP process).

• Adoption of MBIT process.

• On-chip damper diode.


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C5696 transistor datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1600 V

2. Collector to Emitter Voltage: Vceo = 800 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 12 A

5. Collector Dissipation : Pc = 3 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

C5696 Transistor Datasheet