C6010 Transistor – NPN, Pinout, 2SC6010 ( Datasheet PDF )

Part Number: C6010, 2SC6010

Function: 285 V, 1 A, NPN Transistor

Manufacturer: Toshiba

Images:C6010 pinout datasheet


The C6010 is Silicon NPN Triple Diffused Type Transistor. An NPN Triple Diffused Type Transistor is a type of bipolar junction transistor (BJT) with a specific construction and design. The “triple diffused” terminology refers to the manufacturing process used to create multiple diffused layers within the transistor, resulting in improved performance characteristics.

1. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators.

2. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.

3. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source.


1. High speed switching: tf = 0.24μs (max) (IC = 0.3A)


Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 600 V

2. Collector to Emitter Voltage: Vceo = 285 V

3. Emitter to Base Voltage: Vebo = 8 V

4. Collector Current: Ic = 1 A

5. Collector Dissipation : Pc = 1 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C



1. High Voltage Switching

2. Switching Regulator

3. DC-DC Converter […]

C6010 transistor

C6010 PDF Datasheet

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