Part Number: CHZ015A-QEG
Function: 15W L-Band Driver
Package: SMD leadless Type
Manufacturer: United Monolithic Semiconductors
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Description
The CHZ015A-QEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. The circuit is well suited for pulsed radar application. The CHZ015A-QEG is proposed on a 0.5µm gate length GaN HEMT process. It is based on Quasi MMIC technology. It is supplied in RoHS compliant SMD package.
GaN HEMT stands for Gallium Nitride High Electron Mobility Transistor. It’s a type of semiconductor device used in electronic circuits for various applications, particularly in high-frequency and high-power applications. Let’s break down what each part of the acronym means:
1. GaN (Gallium Nitride): Gallium Nitride is a wide-bandgap semiconductor material with excellent electronic properties. It can operate at higher temperatures and voltages compared to traditional materials like silicon (Si). This makes GaN particularly suited for high-performance and high-power applications.
2. HEMT (High Electron Mobility Transistor): A HEMT is a type of transistor that operates based on the principle of high electron mobility. In simple terms, it’s a three-terminal device used to amplify or switch electronic signals and power. HEMTs offer several advantages, including high speed, low noise, and good power efficiency.
A GaN HEMT combines the advantages of both gallium nitride as a semiconductor material and the HEMT transistor design.
Features
1. Wide band capability: 1.2 – 1.4GHz
2. Pulsed operating mode
3. High power: > 15W
4. High PAE: up to 55%
5. DC bias: VDS=45V @ I D_Q=100mA
6. Low cost package: 24L-QFN4x5
7. MTTF > 106 hours @ Tj=200°C
CHZ015A-QEG PDF Datasheet
