Part Number: CS20N60A8H
Function: 600V, 20A, Silicon N-Channel Power MOSFET
Package: TO-220AB Type
Manufacturer: Huajing Microelectronics
Images:
Description
CS20N60A8H, the 600V, 20A, silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard.
Features：
1. Fast Switching
2. Low ON Resistance(Rdson≤0.45Ω)
3. Low Gate Charge (Typical Data:61nC)
4. Low Reverse transfer capacitances(Typical: 20pF)
5. 100% Single Pulse avalanche energy Test
Pinouts:
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 20 A
4. Power Dissipation: Pd = 250 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications：
1. Power switch circuit of adaptor and charger
CS20N60A8H PDF Datasheet
