Part Number: D2011UK
Function: METAL GATE RF SILICON FET
Package: DBC1 Type
Manufacturer: Seme LAB
Images:
Description
D2011UK IS METAL GATE RF SILICON FET. A GATE RF Silicon FET (Field-Effect Transistor) is a type of semiconductor device used in radio frequency (RF) applications. It belongs to the family of FETs, which are three-terminal devices capable of controlling the flow of current between the source and the drain terminals using an electric field.
Features
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND Applications
• LOW Crss
• LOW NOISE
• HIGH GAIN
Absolute maximum ratings ( Ta=25°C )
1. Drain – Source Breakdown Voltage: Vdss = 65V
2. Gate – Source Breakdown Voltage: Vgss = ±20V
3. Drain Current: Id = 8A
4. Power Dissipation: Pd = 70 W
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) :
Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance- Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 10W VDS = 28V f = 1GHz VDS = 0 VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.8A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 1.6A 1 1.44 10 40 20:1 65 Typ. Max. Unit V 8 8 7 mA mA V S dB % — VGS(th) Gate Threshold Voltage- h VSWR Load Mismatch Tolerance Ciss Coss Crss 96 48 4 pF pF pF – Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2% THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 2.5°C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 2543 Issue 1 […]
Applications:
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz
D2011UK PDF Datasheet
