Part Number: D2499, 2SD2499
Function: 600V, 6A, NPN Transistor
Package: TO-3P Type
Manufacturer: Toshiba Semiconductor
D2499 is 600V, 6A, Silicon NPN Transistor. A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.
1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.
2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.
3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.
Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.
1. High Voltage : VCBO = 1500 V
2. Low Saturation Voltage : VCE (sat) = 5 V (Max.)
3. High Speed : tf = 0.3 μs (Typ.)
4. Bult-in Damper Type
5. Collector Metal (Fin) is Fully Covered with Mold Resin.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 1500 V
2. Collector to Emitter Voltage: Vceo = 600 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 6 A
5. Collector Dissipation : Pc = 50 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
1. Horizontal Deflection Output For Color TV