Part Number: D362, 2SD362
Function: 70V, 5A, NPN Transistor
Package: TO-220C Type
Manufacturer: SavantIC
Images:
1 page
Description
D362 is Silicon NPN Power Transistor. A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.
NPN Configuration:
1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.
2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.
3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.
Characteristics of NPN Transistors:
1. Bipolar Junction: NPN transistor is a BJT (Bipolar Junction Transistor). In other words, it has a structure composed of three regions alternating between N-type semiconductor, P-type semiconductor, and N-type semiconductor.
2. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators.
3. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.
4. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source.
Features :
1. With TO-220C package
2. Collector-base voltage: VCBO=150V
3. Collector current :IC=5A
4. Collector dissipation : PC=40 (TC=25 )
3 page
Applications:
1. B/W TV horizontal deflection output applications
D362 PDF Datasheet
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